Integrated circuit system employing selective epitaxial growth technology
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United States of America Patent
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Sep 14, 2010
Grant Date -
Jun 11, 2009
app pub date -
Dec 7, 2007
filing date -
Dec 7, 2007
priority date (Note) -
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Abstract
An integrated circuit system that includes: providing a substrate; depositing a dielectric on the substrate; depositing an isolation dielectric on the dielectric; forming a trench through the isolation dielectric and the dielectric to expose the substrate; depositing a dielectric liner over the integrated circuit system; processing the dielectric liner to form a trench spacer; and depositing an epitaxial growth within the trench that includes a crystalline orientation that is substantially identical to the substrate.
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