Method of separating light-emitting diode from a growth substrate

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United States of America Patent

PATENT NO 8486730
APP PUB NO 20120298956A1
SERIAL NO

13567734

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Abstract

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A method of forming a light-emitting diode (LED) device and separating the LED device from a growth substrate is provided. The LED device is formed by forming an LED structure over a growth substrate. The method includes forming and patterning a mask layer on the growth substrate. A first contact layer is formed over the patterned mask layer with an air bridge between the first contact layer and the patterned mask layer. The first contact layer may be a contact layer of the LED structure. After the formation of the LED structure, the growth substrate is detached from the LED structure along the air bridge.

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Patent Owner(s)

  • EPISTAR CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Ding-Yuan Taichung, TW 63 618
Chiou, Wen-Chih Miaoli, TW 396 8133
Lin, Hung-Ta Hsin-Chu, TW 43 900
Yu, Chen-Hua Hsin-Chu, TW 2039 41095

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