Semiconductor device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 8502269
APP PUB NO 20120032228A1
SERIAL NO

13198434

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

A first first-conductivity-type diffusion layer, a first second-conductivity-type diffusion layer, a second first-conductivity-type diffusion layer, and a second second-conductivity-type diffusion layer are arranged in this order. In a region where the second second-conductivity-type diffusion layer and the first-conductivity-type layer are in contact with each other, impurity concentrations thereof are higher in a part in contact with a side face of the second second-conductivity-type diffusion layer than in a part at a bottom surface of the second second-conductivity-type diffusion layer.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

  • RENESAS ELECTRONICS CORPORATION

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Sato, Masaharu Kanagawa, JP 58 680
Sawahata, Kouichi Kanagawa, JP 7 54

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation

Maintenance Fees

Fee Large entity fee small entity fee micro entity fee due date
11.5 Year Payment $7400.00 $3700.00 $1850.00 Feb 6, 2025
Fee Large entity fee small entity fee micro entity fee
Surcharge - 11.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge after expiration - Late payment is unavoidable $700.00 $350.00 $175.00
Surcharge after expiration - Late payment is unintentional $1,640.00 $820.00 $410.00