HIGH ON-CURRENT DEVICE FOR HIGH PERFORMANCE EMBEDDED DRAM (EDRAM) AND METHOD OF FORMING THE SAME
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United States of America Patent
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Nov 23, 2004
Grant Date -
Dec 16, 2004
app pub date -
Jun 10, 2003
filing date -
Jun 10, 2003
priority date (Note) -
Granted
status (Latency Note)
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Abstract
A method for enhancing the on-current carrying capability of a MOSFET device is disclosed. In an exemplary embodiment, the method includes recessing fill material formed within a shallow trench isolation (STI) adjacent the MOSFET so as to expose a desired depth of a sidewall of the STI, thereby increasing the effective size of a parasitic corner device of the MOSFET. The threshold voltage of the parasitic corner device is then adjusted so as to be substantially equivalent to the threshold voltage of the MOSFET device.
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