Forming finfet cell with fin tip and resulting device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9059093
APP PUB NO 20150137203A1
SERIAL NO

14081736

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Abstract

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Methods for forming a variable fin FinFET cell wherein a plurality of fins is formed above a substrate, a portion of a fin is removed, forming a fin tip, a first area of a gate oxide layer is formed above the fin tip, and a second area of the gate oxide layer is formed above at least a remaining portion of the plurality of fins, wherein the first area is thicker than the second area.

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hindawy, Nader Wappingers Falls, US 2 5
Mittal, Anurag Saratoga Springs, US 39 529
Tarabbia, Marc Austin, US 19 230

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