Method for forming conductive contact of semiconductor device
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United States of America Patent
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-
Aug 6, 2002
Grant Date -
Jan 3, 2002
app pub date -
Apr 20, 2001
filing date -
Jun 30, 2000
priority date (Note) -
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Abstract
A method for forming a conductive contact of a semiconductor device is provided. According to one aspect of the present invention, a dummy dielectric layer pattern having a dummy opening and an interdielectric layer pattern having a lower etch-rate than that of the dummy dielectric layer, for filling the dummy opening are formed on a semiconductor substrate. The dummy dielectric layer pattern using the interdielectric layer pattern as an etching mask is selectively removed, and a contact opening for exposing the semiconductor substrate of a portion in which the dummy dielectric layer pattern is located.
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