Semiconductor device and method for manufacturing same
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United States of America Patent
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Feb 5, 2002
Grant Date -
N/A
app pub date -
Dec 13, 1999
filing date -
Dec 11, 1998
priority date (Note) -
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Abstract
A semiconductor device including: a semiconductor substrate, and an interconnect made of a titanium silicide film overlying the semiconductor substrate, the titanium silicide film including at least one atom selected from the group consisting of phosphorus, arsenic and antimony at an average density between 5.times.10.sup.19 and 3.times.10.sup.20 atoms/cm.sup.3. Although the titanium silicide film is conventionally recognized to cause depletion of an underlying polysilicon and increase of a connected-polysilicon-plug resistance, these deficiencies can be suppressed by specifying the average density.
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