Semiconductor device with sidewall oxidized dielectric and method for fabricating the same

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United States of America

PATENT NO 11302827
APP PUB NO 20210234037A1
SERIAL NO

16751180

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Abstract

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The present application discloses a semiconductor device with an oxidized intervention layer and a method for fabricating the semiconductor device. The semiconductor device includes a substrate, a tunneling insulating layer disposed over the substrate, a floating gate disposed over the tunnel oxide layer, a lateral oxidized intervention layer disposed over the floating gate, and a control gate disposed over the dielectric layer. The lateral oxidized intervention layer comprises a sidewall portion and a center portion, and the sidewall portion has a greater concentration of oxygen than the center portion.

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Patent Owner(s)

  • NANYA TECHNOLOGY CORP.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Te-Yin Taoyuan, TW 18 65

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