Method of manufacturing thin film transistor and thin film transistor substrate
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United States of America Patent
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Feb 19, 2013
Grant Date -
Jun 28, 2012
app pub date -
Jan 13, 2012
filing date -
Dec 5, 2008
priority date (Note) -
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Abstract
A thin film transistor substrate. The thin film transistor substrate includes a substrate, an adhesive layer on the substrate, and a semiconductor layer having a first doped region, a second doped region and a channel region on the adhesive layer. The thin film transistor substrate further includes a first dielectric layer on the semiconductor layer, a gate electrode overlapping the channel region, a second dielectric layer on the first dielectric layer and the gate electrode, a source electrode disposed on the second insulating layer, and a drain electrode spaced apart from the source electrode on the source electrode. The channel region is disposed between the first doped region and the second doped region, and has a transmittance higher than those of the first doped region and the second doped region.
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