Thin film transistor, manufacturing method thereof, and circuit and liquid crystal display device using the thin film transistor
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United States of America Patent
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Dec 25, 2001
Grant Date -
N/A
app pub date -
Jan 19, 2000
filing date -
Jun 28, 1996
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A thin film transistor has a structure capable of decreasing deterioration in Vgs-Ids characteristics. The thin film transistor has a source region composed of an N-type impurity-diffused region, a drain region, and a gate electrode, and a channel region formed directly below the gate electrode. To the source region and the drain region are connected a source electrode and a drain electrode, respectively, through a plurality of contact holes. In the channel region are formed a plurality of P-type impurity-diffused regions at constant intervals.
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