Method for detecting environmental parameter in semiconductor fabrication facility

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United States of America Patent

PATENT NO 11892382
APP PUB NO 20230066693A1
SERIAL NO

17460020

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Abstract

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A method of monitoring a semiconductor fabrication facility and a semiconductor fabrication facility are provided. The method includes collecting an ambient air in a clean room through a plurality of gas lines with their gas inlets arranged at a plurality of sampling positions in the clean room. The method also includes measuring a parameter of the ambient air by a plurality of metrology devices which are connected to the gas lines. At least two of the sampling positions are measured simultaneously. The method further includes issuing a warning when the parameter detected by the metrology devices is outside a range of acceptable values.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chuang, Tzu-Sou Hsinchu, TW 14 6
Tsao, Chih-Ming Miaoli County, TW 17 29

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