Epitaxial wafer for semiconductor light-emitting devices, and semiconductor light-emitting device
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United States of America Patent
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Nov 11, 2008
Grant Date -
Jan 5, 2006
app pub date -
Apr 14, 2005
filing date -
Jun 3, 2004
priority date (Note) -
Expired
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Abstract
An epitaxial wafer for semiconductor light-emitting devices has an n-type substrate, on which are sequentially formed an n-type cladding layer, an active layer, a p-type cladding layer having Mg as a p-type dopant, and a p-type cap layer. The p-type cap layer has at least two Mg-doped and Zn-doped layers that are formed sequentially from the substrate side.
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