Continuous heat treatment system of semiconductor wafers for eliminating thermal donor
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United States of America Patent
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Sep 12, 1995
Grant Date -
N/A
app pub date -
Mar 31, 1993
filing date -
Aug 7, 1992
priority date (Note) -
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Abstract
A heat treatment system is fabricated from a loading section, a heat treatment section and a outlet section integrated with one another, and the heat treatment section comprises a transfer mechanism provided between the loading section and the outlet section for successively transferring silicon wafers, a heating unit provided along the transfer mechanism for heating the silicon wafers, and a cooling unit provided along the transfer mechanism and closer to the outlet section than the heating section for cooling the silicon wafers so that the silicon wafers are continuously treated with heat for annihilating thermal donors produced from oxygen during the growth of a silicon crystal without any handling by operators.
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