Si-rich surface layer capped diffusion barriers
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jan 20, 2004
Grant Date -
Dec 19, 2002
app pub date -
Jun 28, 2002
filing date -
Aug 27, 1999
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A copper interconnect having a transition metal-nitride barrier (106) with a thin metal-silicon-nitride cap (108). A transition metal-nitride barrier (106) is formed over the structure. Then the barrier (106) is annealed in a Si-containing ambient to form a silicon-rich capping layer (108) at the surface of the barrier (106). The copper (110) is then deposited over the silicon-rich capping layer (108) with good adhesion.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully