Importance

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Abstract

A vapor-phase growth apparatus includes: at least a reaction furnace which is hermetically closable, a wafer container which is disposed in the reaction furnace, for disposing a wafer at a predetermined position, a gas supply member for supplying a source gas toward the wafer, and a heating member for heating the wafer, wherein the apparatus is designed to form a grown film on a front surface of the wafer by supplying the source gas in a high temperature state while the heating member heats the wafer in the reaction furnace through the wafer container. The wafer container is made of a single material or a single member, and has a ratio R.sub.2/R.sub.1, which is not less than 0.4 to not more than 1.0, where R.sub.1 is a heat resistance for a heat transfer route from a rear surface of the wafer container toward the front surface of the wafer, and R.sub.2 is a heat resistance for a heat transfer route from the rear surface of the wafer container toward a front surface of the wafer container.

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First Claim