Ferroelectric memory device and method of forming the same
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United States of America Patent
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May 18, 2004
Issued Date -
N/A
app pub date -
Jan 30, 2002
filing date -
Feb 12, 2001
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A ferroelectric memory device along with a method of forming the same are provided. A first interlayer insulating layer is formed on a semiconductor substrate. A buried contact structure is formed on the first interlayer insulating layer. The buried contact structure is electrically connected to the substrate through a first contact hole extending through the first interlayer insulating layer. A blocking layer covers or encapsulates the buried contact structure and the first interlayer insulating layer. A second interlayer insulating layer is formed on the blocking layer. A ferroelectric capacitor formed on the second interlayer insulating layer and is electrically connected to the buried contact structure through a second contact hole that penetrates the second interlayer insulating layer and the blocking layer.
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