Semiconductor structure comprising regions having an isolation trench with a stepped bottom surface therebetween and method of forming the same

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United States of America Patent

PATENT NO 11515404
APP PUB NO 20220223720A1
SERIAL NO

17160427

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Abstract

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A semiconductor structure includes a substrate having a first region and a second region around the first region. A first fin structure is disposed within the first region. A second fin structure is disposed within the second region. A first isolation trench is disposed within the first region and situated adjacent to the first fin structure. A first trench isolation layer is disposed in the first isolation trench. A second isolation trench is disposed around the first region and situated between the first fin structure and the second fin structure. The bottom surface of the second isolation trench has a step height. A second isolation layer is disposed in the second isolation trench.

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Patent Owner(s)

  • UNITED MICROELECTRONICS CORP.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chiu, Ta-Wei Changhua County, TW 18 129
Li, Shin-Hung Nantou County, TW 31 79
Tsao, Ruei-Jhe New Taipei, TW 4 0
Yang, Tsung-Yu Chiayi County, TW 75 95

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