Methods of fabricating normally-off semiconductor devices
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United States of America Patent
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Jun 12, 2012
Grant Date -
Oct 27, 2011
app pub date -
Jul 1, 2011
filing date -
Jul 31, 2008
priority date (Note) -
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Abstract
Normally-off semiconductor devices are provided. A Group III-nitride buffer layer is provided. A Group III-nitride barrier layer is provided on the Group III-nitride buffer layer. A non-conducting spacer layer is provided on the Group III-nitride barrier layer. The Group III-nitride barrier layer and the spacer layer are etched to form a trench. The trench extends through the barrier layer and exposes a portion of the buffer layer. A dielectric layer is formed on the spacer layer and in the trench and a gate electrode is formed on the dielectric layer. Related methods of forming semiconductor devices are also provided herein.
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