Device and method for the deposition of, in particular, crystalline layers on, in particular, crystalline substrates
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United States of America Patent
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Dec 12, 2006
Grant Date -
Jan 8, 2004
app pub date -
Mar 3, 2003
filing date -
Sep 1, 2000
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The invention relates to a device and method for the deposition of in particular, crystalline layers on one or several, in particular, equally crystalline substrates in a process chamber, by means of reaction gases which are fed to the process chamber where they react pyrolytically. The process chamber has a first wall and a second wall, lying opposite the first. The first wall is provided with at least one heated substrate holder, to which at least one reaction gas is led by means of a gas inlet device. According to the invention, a premature decomposition of source gases and a local oversaturation of the gas flow with decomposition products may be avoided, whereby the gas inlet device is liquid cooled.
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