CMOS image sensor with equivalent potential diode and method for fabricating the same
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United States of America Patent
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Feb 6, 2001
Grant Date -
N/A
app pub date -
Feb 26, 1999
filing date -
Feb 28, 1998
priority date (Note) -
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status (Latency Note)
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Abstract
A CMOS image sensor according to the present invention has a low-voltage photodiode which is fully depleted at a bias of 1.2-4.5V. The photodiode comprises: a P-epi layer; a field oxide layer dividing the P-epi layer into a field region and an active region; a N.sup.- region formed within the P-epi layer, wherein the first impurity region is apart from the isolation layer; and a P.sup.0 region of the conductive type formed beneath a surface of the P-epi layer and on the N.sup.- region, wherein a width of the P.sup.0 region is wider than that of the N.sup.- region so that a portion of the P.sup.0 region is formed on the P-epi layer, whereby the P.sup.0 region has the same potential as the P-epi layer.
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