Magnetic field assisted stram cells
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United States of America Patent
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Mar 19, 2013
Grant Date -
Oct 4, 2012
app pub date -
Jun 8, 2012
filing date -
Aug 7, 2008
priority date (Note) -
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Abstract
Memory units that have a magnetic tunnel junction cell that utilizes spin torque and a current induced magnetic field to assist in the switching of the magnetization orientation of the free layer of the magnetic tunnel junction cell. The memory unit includes a spin torque current source for passing a current through the magnetic tunnel junction cell, the spin torque current source having a direction perpendicular to the magnetization orientations, and also includes a magnetic ampere field current source is oriented in a direction orthogonal or at some angles to the magnetization orientations.
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