Display device and manufacturing method thereof, and semiconductor device and manufacturing method thereof
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United States of America Patent
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Nov 22, 2011
Grant Date -
Dec 17, 2009
app pub date -
Jun 16, 2009
filing date -
Jun 17, 2008
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A display device includes source/drain electrodes on a substrate, a pixel electrode, an insulating partition wall layer, a channel-region semiconductor layer. The source/drain electrodes and the pixel electrode are formed on the substrate and in contact with each other. The insulating partition wall layer is formed on the substrate and provided with a first opening extending to between the source electrode and the drain electrode and a second opening formed on the pixel electrode and extending to the pixel electrode. The channel-region semiconductor layer is formed on the bottom of the first opening. The insulating film is formed on the partition wall layer so as to cover the first opening including the channel-region semiconductor layer. The oriented film covers the first opening from above the insulating film and the second opening from the pixel electrode.
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