Method of correcting topographical effects on a micro-electronic substrate
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United States of America Patent
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May 14, 2002
Grant Date -
N/A
app pub date -
Jul 21, 2000
filing date -
Jul 22, 1999
priority date (Note) -
Expired
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Abstract
A method of correcting topographical effects on a microelectronic substrate, the method comprising the steps consisting in depositing a layer of resin on the structure to be planarized having topography in relief surrounded by isolation zones, and subjecting said resin layer in its zones superposed on underlying zones of high topographical density to photolithography by means of a mask possessing a standard mesh without any one-to-one coincidence with the underlying topography.
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