Photodiode array and radiation detector having depressions of predetermined depth formed in regions corresponding to the regions where the photodiodes are formed in the semiconductor substrate
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United States of America Patent
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Feb 15, 2011
Grant Date -
Jan 25, 2007
app pub date -
Mar 25, 2004
filing date -
Mar 27, 2003
priority date (Note) -
Expired
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Abstract
A photodiode array 1 is provided with an n-type silicon substrate 3. A plurality of photodiodes 4 are formed in array on the opposites surface side to an incident surface of light L to be detected, in the n-type silicon substrate 3. A depression 6 with a predetermined depth more depressed than a region not corresponding to regions where the photodiodes 4 are formed is formed in regions corresponding to the regions where the photodiodes 4 are formed, on the incident surface side of the light L to be detected, in the n-type silicon substrate 3.
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