Importance

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Abstract

In a solid state image pick-up element of static induction transistor type having an n.sup.+ source region, an n.sup.+ drain region, an n.sup.-channel region formed between the source and drain regions and a p.sup.+ signal storing gate region formed in the channel region for storing charge carriers induced in the channel region in response to light input, an n.sup.+ resetting region is formed in the signal storing gate region to form a p-n junction therebetween and an electrode is provided on the resetting region to control a bias voltage applied to the resetting region. Upon a resetting operation, when the p-n junction is selectively biased in the forward direction, it is possible to completely discharge charge carriers stored in thegate region through the resetting region in an accurate manner. Since the resetting region is formed in the signal storing gate region, the integration density is not reduced.

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First Claim