Method for locally modifying electronic and optoelectronic properties of crystalline materials an devices made from such materials
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United States of America Patent
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Sep 25, 2007
Grant Date -
Aug 14, 2003
app pub date -
Jun 7, 2001
filing date -
Jun 8, 2000
priority date (Note) -
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Abstract
An electronic or optoelectronic device fabricated from a crystalline material in which a parameter of a bandgap characteristic of said crystalline material has been modified locally by introducing distortions on an atomic scale in the lattice structure of said crystalline material and the electronic and/or optoelectronic parameters of said device are dependent on the modification of said bandgap is exemplified by a radiation emissive optoelectronic semiconductor device which comprises a junction (10) formed from a p-type layer (11) and an n-type layer (12), both formed from indirect bandgap semiconductor material. The p-type layer (11) contains an array of dislocation loops which create a strain field to confine spatially and promote radiative recombination of the charge carriers.
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