Semiconductor structure and method for making same

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United States of America Patent

PATENT NO 8518798
SERIAL NO

12888454

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Abstract

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One or more embodiments relate to a method for forming a semiconductor structure, including: forming a semiconductor layer; and forming a dielectric layer over a back side of said semiconductor layer. In one or more embodiments, the dielectric layer may be a silicone rubber layer.

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Patent Owner(s)

  • INFINEON TECHNOLOGIES AG

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Graetz, Eric Krumpendorf, AT 8 515

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