Silicon-containing film-forming composition, silicon-containing film-formed substrate, and patterning process

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United States of America Patent

PATENT NO 8501386
APP PUB NO 20120052685A1
SERIAL NO

13205262

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Abstract

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A thermosetting silicon-containing film-forming composition for forming a silicon-containing film to be formed in a multi-layer resist process used in lithography, the composition including at least: (A) a silicon-containing compound obtained by hydrolysis-condensation of a hydrolyzable silicon compound and compound(s) selected from the group consisting of a hydrolyzable silicon compound and a reactive compound; (B) a thermal crosslinking accelerator; (C) an organic acid with one, or two or more valency having 1 to 30 carbon atoms; and (D) an organic solvent.

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Patent Owner(s)

  • SHIN-ETSU CHEMICAL CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hasegawa, Koji Jyoetsu, JP 291 3133
Ogihara, Tsutomu Jyoetsu, JP 204 1984
Ueda, Takafumi Jyoetsu, JP 62 882
Yano, Toshiharu Jyoetsu, JP 28 402

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