Method of modifying epitaxial growth shape on source drain area of transistor

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United States of America Patent

PATENT NO 9530661
SERIAL NO

14799387

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Abstract

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Methods for forming semiconductor devices, such as FinFETs, are provided. An epitaxial film is formed over a semiconductor fin, and the epitaxial film includes a top surface having two facets. A cap layer is deposited on the top surface, and portions of the epitaxial film in a lateral direction are removed. Having a smaller lateral dimension prevents the epitaxial film from merging with an adjacent epitaxial film and creates a gap between the epitaxial film and the adjacent epitaxial film.

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Patent Owner(s)

  • APPLIED MATERIALS, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Dube, Abhishek Belmont, US 81 1098
Kim, Yihwan San Jose, US 67 4023
Li, Xuebin Sunnyvale, US 57 850

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