High side NFET gate driving circuit
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United States of America Patent
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-
Dec 13, 2005
Grant Date -
N/A
app pub date -
Jan 2, 2004
filing date -
Jan 2, 2004
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A circuit that provides for a high side NFET gate driver that uses a circuit using only common capacitors, diodes, resistors, and transistors to create a high side NFET gate driver. The system is operated so that when there is a high input the NFET will turn off and when there is a low input the NFET will turn on.
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