Method of manufacturing a semiconductor structure
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United States of America Patent
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May 23, 2023
Grant Date -
Jul 7, 2022
app pub date -
Mar 22, 2022
filing date -
Feb 14, 2020
priority date (Note) -
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status (Latency Note)
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Abstract
A method of manufacturing a semiconductor structure includes providing a substrate having an active region surrounded by an isolation layer; forming a first trench and a second trench in the active region, and a third trench and a fourth trench in the isolation layer; forming a bottom work-function layer in the third trench and the fourth trench, respectively; forming a middle work-function layer on the bottom work-function layer and in the first and the second trenches; forming a top work-function layer on the middle work-function layer; and forming a capping layer on the top work-function layer that fills a remaining region of the first, the second, the third and the fourth trenches.
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