Importance

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Abstract

In one aspect, the invention includes a semiconductor device comprising: a) an electrically insulative layer over a substrate; b) an opening within the electrically insulative layer, the opening having a periphery defined at least in part by a bottom surface and a sidewall surface; c) a first layer comprising TiN within the opening, the first layer being over the bottom surface and along the sidewall surface; d) a second layer comprising elemental Ti over the electrically insulative layer but substantially not within the opening, the second layer having a thickness of less than 75.ANG. along the sidewall surface and over the bottom surface; and e) an aluminum-comprising layer within the opening and over the second layer. In another aspect, the invention includes a semiconductor device comprising: a) a first aluminum-comprising layer over an electrically insulative layer; b) a first titanium-comprising layer over the first aluminum-comprising layer; c) a second titanium-comprising layer over the first titanium-comprising layer, one of the first and second titanium-comprising layers comprising elemental Ti and the other of the first and second titanium-comprising layers comprising TiN; and d) a second aluminum-comprising layer over the second titanium-comprising layer.

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First Claim