Magnetoresistive element and magnetic memory unit

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United States of America Patent

PATENT NO 6990014
SERIAL NO

11078976

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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In a magnetoresistive element which includes at least a pair of ferromagnetic layers stacked with having an intermediate layer inbetween and achieves a change in the magnetic resistance by permitting a current to flow in the direction which crosses the plane of the stacked layers, by virtue of having a construction wherein at least one ferromagnetic layer constituting an information recording layer has an amorphous structure containing a CoFeB or CoFeNiB alloy and has a plane form having a longer axis in one direction wherein both sides thereof along the longer axis direction form a straight line or a curved outward, and the both ends thereof in the longer axis direction form a curved or bent outward from, wherein the pattern form has an aspect ratio of 1:1.2 to 1:3.5, excellent asteroid curve having consistency in the properties can be stably obtained.

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Patent Owner(s)

  • SONY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bessho, Kazuhiro Kanagawa, JP 163 1864
Higo, Yutaka Miyagi, JP 184 1901
Hosomi, Masanori Miyagi, JP 189 1995
Kano, Hiroshi Kanagawa, JP 132 1879
Mizuguchi, Tetsuya Kanagawa, JP 52 804
Ohba, Kazuhiro Miyagi, JP 67 873
Sone, Takeyuki Miyagi, JP 39 414
Yamamoto, Tetsuya Kanagawa, JP 579 12339

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