Gate structure in a trench region of a semiconductor device and method for manufacturing the same
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United States of America Patent
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Feb 8, 2011
Grant Date -
Aug 20, 2009
app pub date -
Apr 28, 2009
filing date -
Dec 29, 2005
priority date (Note) -
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Abstract
Disclosed are a gate structure in a trench region of a semiconductor device and a method for manufacturing the same. The semiconductor device includes a pair of drift regions formed in a semiconductor substrate; a trench region formed between the pair of drift regions; an oxide layer spacer on sidewalls of the trench region; a gate formed in the trench region; and a source and a drain formed in the pair of the drift regions, respectively.
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