Group III nitride transistor structure capable of reducing leakage current and fabricating method thereof

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United States of America Patent

PATENT NO 11810910
APP PUB NO 20230260988A1
SERIAL NO

18012240

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A group III nitride transistor structure capable of reducing a leakage current and a fabricating method thereof are provided. The group III nitride transistor structure includes: a first heterojunction and a second heterojunction which are laminated, wherein the first heterojunction is electrically isolated from the second heterojunction via a high resistance material and/or insertion layer; a first electrode, a second electrode and a first gate which are matched with the first heterojunction, wherein a third semiconductor is arranged between the first gate and the first heterojunction, and the first gate is also electrically connected with the first electrode; a source, a drain and a second gate which are matched with the second heterojunction, wherein the source and the drain are also respectively electrically connected with the first gate and the second electrode, and a sixth semiconductor is arranged between the second gate and the second heterojunction.

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Patent Owner(s)

Patent OwnerAddress
SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS (SINANO) CHINESE ACADEMY OF SCIENCES215123 NO 398 SHUI SHUI ROAD SUZHOU INDUSTRIAL PARK JIANGSU SUZHOU CITY JIANGSU PROVINCE 215123

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Wei, Xing Suzhou, CN 101 632
Zhang, Baoshun Suzhou, CN 10 9
Zhang, Xiaodong Suzhou, CN 175 2210
Zhao, Desheng Suzhou, CN 3 0

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