Over-voltage protected semiconductor device
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United States of America Patent
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Dec 23, 2008
Grant Date -
Jan 17, 2008
app pub date -
Jul 11, 2006
filing date -
Jul 11, 2006
priority date (Note) -
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Abstract
In accordance with the principles of the invention, a semiconductor device is provided that has a power transistor and a voltage sensing transistor formed on a substrate. The power transistor has first and second terminals and a control terminal and having a characteristic first breakdown voltage across the first and second terminals. The voltage sensing transistor is coupled across the power transistor first and second terminals. The voltage sensing transistor has a second element characteristic breakdown voltage that is less than the power transistor breakdown voltage. The second transistor provides a control signal to the power transistor control terminal when the voltage across the power transistor first and second terminals exceeds the second element characteristic breakdown voltage.
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