Method of forming ferroelastic lead germanate thin films
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United States of America Patent
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Jun 25, 2002
Issued Date -
N/A
app pub date -
Dec 6, 2001
filing date -
Apr 28, 1999
priority date (Note) -
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Abstract
A Pb.sub.3 GeO.sub.5 phase PGO thin film is provided. This film has ferroelastic properties that make it ideal for many microelectromechanical applications or as decoupling capacitors in high speed multichip modules. This PGO film is uniquely formed in a MOCVD process that permits a thin film, less than 1 mm, of material to be deposited. The process mixes Pd and germanium in a solvent. The solution is heated to form a precursor vapor which is decomposed. The method provides deposition temperatures and pressures. The as-deposited film is also annealed to enhanced the film's ferroelastic characteristics. A ferroelastic capacitor made from the present invention PGO film is also provided.
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