EBS Device with cold-cathode
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United States of America Patent
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Oct 18, 1983
Issued Date -
N/A
app pub date -
Jan 27, 1983
filing date -
Dec 15, 1980
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Apparatus and method are described for fabricating a long life cold cathodelectron beam semiconductor device (EBS). Fabrication is given of a vacuum tube structure capable of sustaining sufficiently high vacuum over extended time to prevent poisoning of the cold cathode and steps are give for growth of a plural tip cold cathode structure.
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