Via for semiconductor device connection and methods of forming the same

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 11961800
APP PUB NO 20220359377A1
SERIAL NO

17814152

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Abstract

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A method for forming a via in a semiconductor device and a semiconductor device including the via are disclosed. In an embodiment, the method may include bonding a first terminal and a second terminal of a first substrate to a third terminal and a fourth terminal of a second substrate; separating the first substrate to form a first component device and a second component device; forming a gap fill material over the first component device, the second component device, and the second substrate; forming a conductive via extending from a top surface of the gap fill material to a fifth terminal of the second substrate; and forming a top terminal over a top surface of the first component device, the top terminal connecting the first component device to the fifth terminal of the second substrate through the conductive via.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chiou, Wen-Chih Zhunan Township, TW 396 8226
Su, An-Jhih Taoyuan, TW 192 1890
Wu, Chi-Hsi Hsinchu, TW 180 3227
Wu, Tsang-Jiuh Hsinchu, TW 101 1112
Yeh, Der-Chyang Hsinchu, TW 265 8304
Yeh, Ming Shih Zhubei, TW 29 148
Yu, Chen-Hua Hsinchu, TW 2046 41607

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