Process for the formation of SiO.sub.2 films
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United States of America Patent
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Oct 4, 1994
Grant Date -
N/A
app pub date -
Aug 31, 1992
filing date -
Aug 31, 1992
priority date (Note) -
Expired
status (Latency Note)
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Abstract
An apparatus and method for the low temperature deposition of SiO.sub.2 in a low pressure chemical vapor deposition system is disclosed. The apparatus makes use of a prereactor to form an activated form of diacetoxyditertiarybutoxysilane (DADBS) from which SiO.sub.2 is deposited. The prereactor may be positioned upstream of an SiO.sub.2 deposition reactor or may be incorporated into the front end thereof.
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