Method and apparatus to reduce dynamic Rdson in a power switching circuit having a III-nitride device

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United States of America Patent

PATENT NO 7948220
APP PUB NO 20080253151A1
SERIAL NO

12099883

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Abstract

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A method of preventing the Rdson of a III-V Nitride power switching circuit from varying over time. The method includes biasing the switch to a pre-bias voltage level just below turn ON when the switch is OFF, wherein traps are discharged when the switch is biased to the pre-bias voltage level just below turn ON and the varying of the Rdson over time due to traps is reduced. The method can be employed in DC-DC converter circuits having III-V Nitride control and synchronous switches connected at a switching node.

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Patent Owner(s)

  • SAMSUNG ELECTRONICS CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bahramian, HamidTony Torrance, US 3 28

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