Fin tunnel field effect transistor (FET)

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United States of America Patent

PATENT NO 9614049
SERIAL NO

13922638

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Abstract

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A fin tunnel field effect transistor includes a seed region and a first type region disposed above the seed region. The first type region includes a first doping. The fin tunnel field effect transistor includes a second type region disposed above the first type region. The second type region includes a second doping that is opposite the first doping. The fin tunnel field effect transistor includes a gate insulator disposed above the second type region and a gate electrode disposed above the gate insulator. A method for forming an example fin tunnel field effect transistor is provided.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bhuwalka, Krishna Leuven, BE 9 44

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