Method for the manufacture of A.sub.3 B.sub.5 light-emitting diodes
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Aug 19, 1986
Grant Date -
N/A
app pub date -
Oct 24, 1984
filing date -
Oct 28, 1983
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A method for the manufacture of A.sub.3 B.sub.5 light-emitting diodes, particularly of light-emitting (Ga,Al)As diodes with Te and Zn as doping materials is provided. A first n-doped GaAlAs layer is epitaxially applied on a GaAs substrate from an n-doped (S,Se,Te) Ga,Al,As melt and after an interim precipitation without contact with the GaAs substrate, preferably on an auxiliary substrate, a GaAlAs layer p-doped with Zn or Mg is deposited on the substrate already epitaxially coated with the n-GaAlAs layer. Efficient light-emitting diodes are obtained.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully