Semiconductor device and method of forming ultra high density embedded semiconductor die package

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 11227809
APP PUB NO 20170186660A1
SERIAL NO

15457736

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ATTORNEY / AGENT: (SPONSORED)

Importance

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Abstract

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A semiconductor device has a plurality of semiconductor die. A first prefabricated insulating film is disposed over the semiconductor die. A conductive layer is formed over the first prefabricated insulating film. An interconnect structure is formed over the semiconductor die and first prefabricated insulating film. The first prefabricated insulating film is laminated over the semiconductor die. The first prefabricated insulating film includes glass cloth, glass fiber, or glass fillers. The semiconductor die is embedded within the first prefabricated insulating film with the first prefabricated insulating film covering first and side surfaces of the semiconductor die. The interconnect structure is formed over a second surface of the semiconductor die opposite the first surface. A portion of the first prefabricated insulating film is removed after disposing the first prefabricated insulating film over the semiconductor die. A second prefabricated insulating film is disposed over the first prefabricated insulating film.

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First Claim

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Patent Owner(s)

  • JCET SEMICONDUCTOR (SHAOXING) CO., LTD.

International Classification(s)

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  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fang, Ching Meng Singapore, SG 9 70
Hsiao, Yung Kuan Singapore, SG 13 94
Liao, Bartholomew Singapore, SG 6 58
Lim, See Chian Singapore, SG 7 45
Phua, Yoke Hor Singapore, SG 7 40
Tan, Teck Tiong Singapore, SG 9 62

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