Buried transistors for silicon on insulator technology
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United States of America Patent
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Oct 2, 2007
Grant Date -
Jul 28, 2005
app pub date -
Mar 21, 2005
filing date -
Aug 21, 2002
priority date (Note) -
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Abstract
A buried transistor particularly suitable for SOI technology, where the transistor is fabricated within a trench in a substrate and the resulting transistor incorporates completely isolated active areas. The resulting substrate has a decreased topography and there is no need for polysilicon (or other) plugs to connect to the transistor, unless desired. With this invention, better control is achieved in processing, particularly of gate length. The substrate having the buried transistor can be silicon oxide bonded to another substrate to form an SOI structure.
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