Phase-change memory device having a barrier layer and manufacturing method
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United States of America Patent
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Aug 12, 2008
Grant Date -
Dec 1, 2005
app pub date -
Dec 30, 2004
filing date -
May 27, 2004
priority date (Note) -
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Abstract
A phase-change memory device has an oxidation barrier layer to protect against memory cell contamination or oxidation and a method of manufacturing the same. In one embodiment, a semiconductor memory device comprises a molding layer overlying a semiconductor substrate. The molding layer has a protrusion portion vertically extending from a top surface thereof. The device further includes a phase-changeable material pattern adjacent the protrusion portion and a lower electrode electrically connected to the phase-changeable material pattern.
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