Split gate memory cell with a floating gate in the corner of a trench
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Feb 18, 2003
Grant Date -
N/A
app pub date -
Aug 9, 2001
filing date -
Aug 9, 2001
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A memory cell and method for making a memory cell. The memory cell has a floating gate and a control gate, and a source region and a drain region. The structure of the device is such that the area of capacitive coupling between the floating gate and the source region is oriented along a sidewall of a trench formed in a substrate. The drain region is disposed under the bottom of the trench.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully