Memory devices including graphene switching devices

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9299789
APP PUB NO 20140097404A1
SERIAL NO

13943006

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Abstract

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A memory device includes a graphene switching device having a source electrode, a drain electrode and a gate electrode. The graphene switching device includes a Schottky barrier formed between the drain electrode and a channel in a direction from the source electrode toward the drain electrode. The memory device need not include additional storage element.

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Patent Owner(s)

  • SAMSUNG ELECTRONICS CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Byun, Kyung-eun Uijeongbu-si, KR 74 256
Chung, Hyun-jong Hwaseong-si, KR 48 776
Heo, Jin-seong Seoul, KR 43 619
Kim, Ho-jung Suwon-si, KR 62 612
Park, Seong-jun Seoul, KR 33 503
Seo, David Yongin-si, KR 39 607
Song, Hyun-jae Hwaseong-si, KR 18 223

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