Sputtering method and apparatus utilizing improved ion source
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United States of America Patent
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Feb 28, 1984
Grant Date -
N/A
app pub date -
Sep 15, 1980
filing date -
Sep 15, 1980
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Method and apparatus for sputtering an element with a magnetron plasma source where a plasma is formed between two generator cathode surfaces of the source and a generator anode disposed adjacent the plasma ejects it toward the element to be sputtered. Various applications are described including selective coating of substrates of different electrical conductivity, substrate cleaning, ion milling, retrieval of expensive or dangerous coating materials, heating with little loss in the heat source, sputtering with reactive ions, sensitization or charge neutralization, and pumping of active gases.
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