Method of simultaneously forming buried resistors and bipolar transistors by ion implantation
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United States of America Patent
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Dec 6, 1983
Issued Date -
N/A
app pub date -
Feb 17, 1982
filing date -
Apr 12, 1979
priority date (Note) -
Expired
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Abstract
A method of making at a relatively low temperature, a resistor region of a high sheet resistance, solely or together with other circuit devices such as bipolar transistors in an IC chip, with the step of forming a buried resistor layer inside a semiconductor substrate at a predetermined depth by an ion implantation, wherein the resultant resistor region has a well-controlled high sheet resistance and the obtained bipolar transistors have a well-improved high frequency characteristics.
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